PART |
Description |
Maker |
AT28LV010-20 AT28LV010-25 AT28LV010-20PC AT28LV010 |
1 Megabit 128K x 8 Low Voltage Paged CMOS E2PROM 64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 3V, 200 ns, PDIP32 64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 3V, 250 ns, PDSO32
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Atmel Corp. Atmel, Corp.
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AM27X010 AM27X010-120JC AM27X010-120JI AM27X010-12 |
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 250 ns, PDIP32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PDIP32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 55 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 120 ns, PDIP32 CABLE TIE BARB TY 120LB 18.1,1
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PROM Advanced Micro Devices, Inc. AMD[Advanced Micro Devices] ADVANCED MICRO DEVICES INC
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AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
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AM29F010-1 AM29F010-120DGC1 AM29F010-120DGE1 AM29F |
1 megabit CMOS 5.0 volt-only, uniform sector flash memory- die revision 1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash MemoryDie Revision 1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 120 ns, UUC30 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 90 ns, UUC30 Evaluation Board for LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers 128K X 8 FLASH 5V PROM, 90 ns, UUC30 LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers; Package: MICRO SMD; No of Pins: 8 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only Uniform Sector Flash Memory-Die Revision 1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory-Die Revision 1
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ADVANCED MICRO DEVICES INC PROM Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
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28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)的EEPROM PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32 3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)EEPROM 3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
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Maxwell Technologies, Inc
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EN29LV010-90TC EN29LV010-70TCP EN29LV010-70SCP EN2 |
1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory 1兆位28K的8位)统一部门.0伏的CMOS只闪 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory 1兆位28K的8位)统一部门3.0伏的CMOS只闪 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory 1兆位128K的8位)统一部门.0伏的CMOS只闪
|
Eon Silicon Solution Inc. Electronic Theatre Controls, Inc. Eon Silicon Solution, Inc.
|
AT29LV010A AT29LV010A-15 AT29LV010A-15JC AT29LV010 |
1 Megabit 128K x 8 3-volt Only CMOS Flash
|
ATMEL[ATMEL Corporation]
|
AT27BV010 AT27BV010-15TC AT27BV010-15TI AT27BV010- |
AML24 Series Rocker Switch, SPDT, 2 position, Gold Contacts, 0.110 in x 0.020 in (Solder or Quick-Connect), Non-Lighted, Rectangle, Snap-in Panel 128K X 8 OTPROM, 90 ns, PQCC32 1 Megabit 128K x 8 Unregulated Battery-Voltage OTP CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32 1M bit, 2.7-Volt to 3.6-Volt EPROM
|
Atmel, Corp. Atmel Corp. ATMEL Corporation
|
EN29LV010 EN29LV010-45RJC EN29LV010-45RJCP EN29LV0 |
1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
|
N.A. ETC Eon Silicon Solution Inc.
|
MX27C1000A MX27C1000AMC-10 MX27C1000AMC-12 MX27C10 |
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32 Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 125
|
Macronix International Co., Ltd. MCNIX[Macronix International]
|
EN29F010-45TCP EN29F010-70JIP EN29F010-70PCP EN29F |
1 Megabit (128K x 8-bit) 5V Flash Memory 1兆位128K的8位)5V的快闪记忆体 Octal Buffer/Line Driver with 3-STATE Outputs; Package: SOIC-Wide; No of Pins: 20; Container: Tape & Reel 1兆位128K的8位)5V的快闪记忆体 1 Megabit (128K x 8-bit) 5V Flash Memory 1兆位28K的8位)5V的快闪记忆体
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Electronic Theatre Controls, Inc. Eon Silicon Solution Inc. Eon Silicon Solution In...
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